Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures

Quasi-static capacitance–voltage (QSCV) measurements are performed on modified metal–oxide–semiconductor capacitors in order to investigate the capacitance characteristics of the active channel region of organic thin-film transistors (OTFTs). Devices are fabricated on highly doped Si wafer with SiO2 as the gate dielectric and pentacene as the organic semiconductor. Hysteresis is observed in the QSCV characteristics, which is explained with the charge trapping in the organic semiconductor. In addition, we show that surface charges generated by Au penetration into pentacene can cause plateaus in the QSCV curves. A behavioral PSpice model is also presented which allows QSCV simulations of OTFTs to be performed.

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► Quasi-static C–V (QSCV) characteristics of modified MOS capacitance structures, which resemble OTFTs, are investigated.
► Charge trapping in the organic semiconductor causes hysteresis in the QSCV characteristics.
► Surface charges generated by Au penetration into pentacene cause plateaus in the QSCV characteristics.
► A PSpice behavioral model of the QSCV characteristics is presented.