Performance improvement of flash memory using AlN as charge-trapping Layer

Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SOHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented.