Fabrication of arrays of line with nanoscale width and large length by electron beam lithography with high-precision stage

Fabrication of arrays of line with a nanoscale width less than 150 nm and length over 1500 μm on SU8 resist was proposed when using SEM-converted exposure system with high-precision positioning stage. Investigating the effect of the stage movement and the local-aperture contamination on stitching errors, we found that changing the deflector gain factors and the cleaning aperture after each exposure made it possible to improve stitching accuracy. Overlapping length 200 nm of line arrays was obtained with increase of 0.35% in x direction and 0.16% in y direction for deflection gain factors.