Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

► Noble and enhanced Ge-indiffusion found on Si(5 5 12)-2 × 1. ► Tensile stress induced by chain structures provides enhanced Ge-indiffusion. ► Displacive and 1D adsorption of Si atoms provides the seed of faceting. ► Replacing hierarchy by Ge: Up-atom → Subsurface-atom → Down-atom.