Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2Â ÃÂ 1: Tensile stress induced by substrate chain structures
Keywords: سطوح تک کریستال شاخص بالا; Semiconductor-semiconductor interfaces; Diffusion and migration; Silicon; Germanium; High index single crystal surfaces; Surface structure, morphology, roughness, and topography; Scanning tunnelling microscopy; Photoelectronspectroscopy;