Stress-driven structural transformation of Sb-passivated Si(114)

► STM, photoemission and DFT calculations are used to understand the Sb/Si(114)-2 × 1. ► All of the surface Si atoms are replaced by Sb atoms without interdiffusion. ► Redistribution of passivating Sb atoms: periodicity-doubling. ► From 2 × 1 (D6-R-D7-R) to 2 × 2 (D6-R-D6-R-R-D7-R).