Thermal properties and thermoelectric microdevices with InN thin films

We report the load characteristics of miniature thermoelectric power devices using InN thin films prepared by reactive radio-frequency (RF) sputtering. The devices are composed of 25-pair and 12-pair InN-chromel films on a SiO2 glass substrate. The open output voltage and the maximum output power were 0.11 V and 2.9×10-8W at ΔT=262K for the 25-pair device, respectively, and 0.05 V and 1.3×10-8W at ΔT=234K for the 12-pair device, respectively. The open output voltage and the maximum output power were proportional to (ΔT)n(ΔT)n (n=1n=1 and 2, respectively).