کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423484 | 1507948 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photo-induced site-specific nitridation of plasma-deposited B10C2Hx films: A new pathway toward post-deposition doping of semiconducting boron carbides
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We show that dopant impurities can be introduced in a controlled, site-specific manner into pre-deposited semiconducting boron carbide films. BâN bond formation has been characterized by X-ray photoelectron spectroscopy for semiconducting B10C2Hx films exposed to vacuum ultraviolet photons in the presence of NH3. Core level photoemission data indicate that BâNH2 bonds are formed at B sites bonded to other boron atoms (BâB), and not at boron atoms adjacent to carbon atoms (BâC) or at carbon atom sites. Nitridation obeys diffusion-limited kinetics. These results indicate that dopant species can be introduced in a controlled, site-specific manner into pre-deposited boron carbide films, as opposed to currently required dopant incorporation during the deposition process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 21â22, October 2010, Pages L51-L54
Journal: Surface Science - Volume 604, Issues 21â22, October 2010, Pages L51-L54
نویسندگان
Swayambhu Behera, Justin Wilks, Peter A. Dowben, M. Sky Driver, A.N. Caruso, Jeffry A. Kelber,