کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5423762 | 1395801 | 2009 | 5 صفحه PDF | دانلود رایگان |

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0Â 0Â 1) surfaces in the presence of an As4 flux. The relationship between the As-rich (2Â ÃÂ 4) and c(4Â ÃÂ 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4Â ÃÂ 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As4 irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE-STM systems relying on sample quenching and transfer.
Journal: Surface Science - Volume 603, Issue 16, 15 August 2009, Pages 2398-2402