An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability

In the proposed work the model has been formulated for discretized doped HEMT, where the conventional uniformly doped, pulsed doped and delta doped structure are the special cases. An expression for sheet carrier density has been formulated considering the effect of doping-thickness product and has been extended to calculate drain current, transconductance, capacitance and cut-off frequency of the device. The model also takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to validate it from subthreshold region to high conduction region. The results so obtained have been compared with pulsed doped structure to validate the model. The analysis concentrates on the distance of doping from the heterojunction and gate electrode. Different design criteria have been given to dope the carriers (amount and distance) in different regions to optimize the performance for higher sheet carrier density/parallel conduction voltage/effective parallel conduction voltage (Vc−Voff) to increase the transconductance, cut-off frequency and reliability of the device.