کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423840 | 1395803 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Final state effect for Au 4f line from gold-nano-particles grown on oxides and HOPG supports
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Final state effect for Au 4f line from gold-nano-particles grown on oxides and HOPG supports Final state effect for Au 4f line from gold-nano-particles grown on oxides and HOPG supports](/preview/png/5423840.png)
چکیده انگلیسی
The effect of a positive charge left to a small metal particle immediately after photoemission, so called the final state effect is studied for Au 4f binding energy (EB) shifts. The size and shape of Au nano-particles were determined by high-resolution medium energy ion scattering combined with scanning electron microscopy of a field emission type. The shape of Au nano-particles is well approximated by a partial sphere with diameter d and height h. It is found that the EB shift is well expressed as number of atoms per particle (nA) and independent of support species. The EB shift changes dramatically at a critical nA value of â¼70 atoms, where metal-nonmetal transition takes place. In the nonmetal region, the EB shift increases steeply almost exponentially with decreasing nA and in contrast, gradually decreases with increasing nA in the metallic region. The effect of the positive charge of an Au 4f vacancy created by photoemission is expressed by the relaxation time Ï and the effective charge +α e when the photoelectron just leaves the Au particle surface (e: electron charge, α < 1).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 13, 1 July 2009, Pages 2108-2114
Journal: Surface Science - Volume 603, Issue 13, 1 July 2009, Pages 2108-2114
نویسندگان
Y. Kitsudo, A. Iwamoto, H. Matsumoto, K. Mitsuhara, T. Nishimura, M. Takizawa, T. Akita, Y. Maeda, Y. Kido,