کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542444 871556 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
چکیده انگلیسی

The addition of small amounts of nitrogen to III–V semiconductors leads to a large degree of band gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The incorporation of active nitrogen has been previously demonstrated for InNxSb1−x (x⩽0.7%) and GaNxSb1−x (x⩽1.75%) material; however, the as-grown carrier concentrations precluded incorporation into a device structure. Here we report the reduction in the as-grown carrier concentration in InNSb by annealing, whilst retaining the active nitrogen content. FTIR absorption measurements show the first direct experimental evidence of narrowing of the InSb bandgap due to nitrogen incorporation. As an alternative route to defect reduction and device compatible material we report on the growth of Ga1−yInyNxSb1−x with 0⩽y⩽30% and x=1.6±0.2% and demonstrate near lattice matching of the material to GaSb.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issue 3, March 2009, Pages 399–402
نویسندگان
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