Influence of ionizing radiation in electronic and optoelectronic properties of III–V semiconductor compounds

The interaction between radiation and matter is very important in the study of materials used in the aerospace industry. The improvement of the resistance of various devices is crucial. In the present work we have produced simulation results of damages induced in electronic devices of III–V semiconductor compounds, using SRIM-TRIM, CASINO and GEANT4 programs. The energies used for α+ particles, SRIM-TRIM, were from 500 keV to 4 MeV for both FETs and HEMTs and the energies used for β− particles, CASINO, were from 1 to 500 keV.