Interaction of α radiation with iron-doped n-type silicon

Deep-level transient spectroscopy (DLTS) measurements were carried out on low-doped n-silicon before and after irradiation with 5.48 MeV α particles at room temperature with a fluence of ∼1010α particles/cm2. The DLTS measurements on the samples identified three electron levels E1, E2 and E3 before irradiation. The deep-levels characteristic studies include emission rate signatures, activation energies, defect concentrations and capture cross sections. It was found that all pre-existing defects decreased their amplitudes during irradiation. The decrease in activation energy of level E3 and noticeable suppression of level E1 was also observed after irradiation. It was clearly seen that the composite peak E3 (combination of E2 and E3) was successfully resolved after irradiating with α particles. α-irradiation is seen to lead a significant suppression of the iron interstitial defect, and without causing any change in its room temperature annealing characteristics.