کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542554 | 871559 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interaction of α radiation with iron-doped n-type silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interaction of α radiation with iron-doped n-type silicon Interaction of α radiation with iron-doped n-type silicon](/preview/png/542554.png)
چکیده انگلیسی
Deep-level transient spectroscopy (DLTS) measurements were carried out on low-doped n-silicon before and after irradiation with 5.48 MeV α particles at room temperature with a fluence of â¼1010α particles/cm2. The DLTS measurements on the samples identified three electron levels E1, E2 and E3 before irradiation. The deep-levels characteristic studies include emission rate signatures, activation energies, defect concentrations and capture cross sections. It was found that all pre-existing defects decreased their amplitudes during irradiation. The decrease in activation energy of level E3 and noticeable suppression of level E1 was also observed after irradiation. It was clearly seen that the composite peak E3 (combination of E2 and E3) was successfully resolved after irradiating with α particles. α-irradiation is seen to lead a significant suppression of the iron interstitial defect, and without causing any change in its room temperature annealing characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 5, May 2008, Pages 797-801
Journal: Microelectronics Journal - Volume 39, Issue 5, May 2008, Pages 797-801
نویسندگان
Khizar-ul-Haq Khizar-ul-Haq, M.A. Khan, U.S. Qurashi, Abdul Majid,