کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425972 1395871 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Following the oxidation of yttrium silicide epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Following the oxidation of yttrium silicide epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy
چکیده انگلیسی

We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to different environments of the Si atoms in the silicide structure. This information has been used to monitor a surface oxidation process promoted by room temperature oxygen adsorption, identifying the final product of this reaction as a silicate-type ternary compound.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 4, 15 February 2006, Pages 841-846
نویسندگان
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