کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425976 | 1395871 | 2006 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Resonant photoemission study of Ti interaction with GaN surface Resonant photoemission study of Ti interaction with GaN surface](/preview/png/5425976.png)
Ti/GaN interface formation on GaN(0 0 0 1)-(1 Ã 1) surface has been investigated by means of resonant photoelectron spectroscopy (for photon energies near to Ti 3p â 3d excitation). The sets of photoelectron energy distribution curves were recorded for in situ prepared clean GaN surface and as a function of Ti coverage followed by post-deposition annealing. Manifestations of chemical reactions at the Ti/GaN interface were revealed in the valence band spectra as well as in the Ga 3d core level peak-the discerned contribution of Ti 3d states to the valence band turned out to be similar to that reported in the literature for titanium nitride. The interaction between Ti and N was further enhanced by post-deposition annealing. The study was complemented with SIMS and AFM measurements.
Journal: Surface Science - Volume 600, Issue 4, 15 February 2006, Pages 873-879