کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426502 | 1395890 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tip-induced large-area oxide bumps and composition stoichiometry test via atomic force microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Tip-induced large-area oxide bumps and composition stoichiometry test via atomic force microscopy Tip-induced large-area oxide bumps and composition stoichiometry test via atomic force microscopy](/preview/png/5426502.png)
چکیده انگلیسی
Using atomic force microscope (AFM) tip, local large-area oxide bumps were induced on a native SiO2 layer applied with a static 10Â V in an ambient surrounding. It can be seen in the backscattered electron (BE) images that the oxide bumps were SiOx layer, not the native SiO2 layer. Also, the spectra of energy dispersive X-ray spectrometer (EDS) displayed that the oxide bumps contained oxygen more than did the native SiO2 layer, indicating that the O/Si ratio of the oxide bump is greater than two. A comparison of the growth rates of the point oxide protrusions on the oxide bumps and on the native SiO2, can be used to directly determined the composition stoichiometry (the O/Si ratio (=x)) of the oxide bumps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 18, 15 September 2007, Pages 3788-3791
Journal: Surface Science - Volume 601, Issue 18, 15 September 2007, Pages 3788-3791
نویسندگان
Yo-Shan Lu, Hsin-I Wu, Sheng Yun Wu, Yuan-Ron Ma,