کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426706 | 1395898 | 2006 | 4 صفحه PDF | دانلود رایگان |
Using real-time, dynamic reflectance anisotropy spectroscopy (RAS) at both 2.6Â eV and 4.0Â eV, we demonstrate that an anisotropic oxide will form on As rich c(4Â ÃÂ 4)/d(4Â ÃÂ 4) GaAs surfaces when exposed to moisture- free air diluted in inert gases in a metal organic chemical vapour deposition (MOCVD) reactor, and that the initial c(4Â ÃÂ 4)/d(4Â ÃÂ 4) structure effects the resulting optical anisotropy of the oxide. This was achieved by investigating how the RA signals at 2.6Â eV and 4Â eV of annealed GaAs (1Â 0Â 0) surfaces evolve relative to the as-etched and as-annealed signals when exposed to oxygen. It is found that while the 2.6Â eV response, which is known to be associated with the As dimers, degrades to pre-process levels indicating their destruction, the 4Â eV signal, stabilizes at an intermediate, permanent level, suggesting the formation of an anisotropic oxide film whose structure is determined at least in part, by the initial c(4Â ÃÂ 4)/d(4Â ÃÂ 4) surface.
Journal: Surface Science - Volume 600, Issue 23, 1 December 2006, Pages L309-L312