کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426813 | 1395908 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature CO induced growth of Pd supported on a monolayer silica film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Nucleation, growth and sintering of Pd deposited on an ultra-thin silica film were studied by scanning tunneling microscopy and infrared reflection absorption spectroscopy. No preferential nucleation of Pd on the silica surface was observed both at 90 and 300Â K deposition. When adsorbed on Pd clusters formed at 90Â K, CO causes a strong sintering effect even at this temperature. The results are rationalized on the basis of a high mobility of Pd carbonyl-like species on the silica film. At a given Pd coverage, the extent of CO induced sintering cannot be achieved by annealing in vacuum. In addition, vacuum sintering, which commences above 700Â K, goes simultaneously with interdiffusion of Pd and support.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages L153-L157
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages L153-L157
نویسندگان
J.-L. Lu, S. Kaya, J. Weissenrieder, H.-J. Gao, S. Shaikhutdinov, H.-J. Freund,