کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5431483 1508821 2018 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advances in carbon nanotube n-type doping: Methods, analysis and applications
ترجمه فارسی عنوان
پیشرفت ها در دوپینگ نانولوله‌های کربنی نوع n : روش، تجزیه و تحلیل و برنامه های کاربردی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
چکیده انگلیسی

Great advances in semiconductor technologies continue to be made with the demand for cheap, non-toxic, easily processed and environmentally friendly technologies on the rise. Single-walled carbon nanotubes (SWCNTs) are viewed as a promising candidate that satisfies these criteria however proper doping of the SWCNTs to provide n-type behaviour has been a persistent issue. In recent years, great advances have been made in providing air stable and efficient n-type doping of SWCNTs. This review presents the most recent and promising methods of n-type doping SWCNTs highlighted for their simplicity and quality of electrical properties. The analysis and major applications of these semiconductors with a focus on thermoelectric devices and transistors are discussed.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 126, January 2018, Pages 257-270
نویسندگان
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