کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5431624 | 1508827 | 2017 | 9 صفحه PDF | دانلود رایگان |
In this work, we report for the first time the resistive switching behavior of a new type of device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) substrate. This new device shows a forming-free bipolar resistive switching behavior, with a low operating voltage of 2Â V and long retention time (5Â ÃÂ 10Ë4Â s). The CNWs are synthesized by electrophoretic deposition of a solution of polyynes obtained by arc discharge. We show that the environmentally-friendly and time-saving fabrication process we developed could overcome the current complex fabrication process of carbon-based memory devices which impede their large-scale development. The obtained results demonstrate the good reproducibility of the device's production process, and that the device's electrical performances can be engineered with a control of the fabrication parameters. The study presented suggests that CNWs are promising candidates for non-volatile memory devices and in carbon-based electronics.
Electrophoretic deposition of polyynes on conductive substrate is used to produce carbon nanowalls for the fabrication of resistive switching memory devices.150
Journal: Carbon - Volume 120, August 2017, Pages 54-62