کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5432230 | 1508831 | 2017 | 9 صفحه PDF | دانلود رایگان |

The data storage performance, stability and reliability of the graphene memories have advanced significantly towards practical information storage applications. Using highly dispersed 4-bromobenzene functionalized RGO (BB-RGO) as two dimensional template, a new poly[(1,4-diethynylbenzene)-alt-boron dipyrro-methene]-grafted reduced graphene oxide (PDBD-g-RGO) was synthesized via Sonogashira coupling reaction. Covalent grafting of PDBD onto BB-RGO gives rise to a 34-cmâ1 blue shift of the D band and a 7-cmâ1 red shift of the G band when compared to the Raman spectrum of BB-RGO. A transparent and flexible nonvolatile memory device with configuration of Al/PDBD-g-RGO/ITO-coated poly(ethylene terephthalate) (PET) exhibited typical storage performance of rewritable memory that can be electrically erased and reprogrammed, with turn-on and turn-off voltages of 1.55 and â1.80 V, and an ON/OFF current ratio exceeding 105. The memory behaviors of the flexible device were almost unchanged under the bending test.
A new poly[(1,4-diethynylbenzene)-alt-boron dipyrromethene]-grafted RGO (PDBD-g-RGO) was synthesized. This material-based memory device exhibited typical storage performance of rewritable memory, with turn-on and turn-off voltages of 1.55 and â1.80 V, and an ON/OFF current ratio of more than 105.216
Journal: Carbon - Volume 116, May 2017, Pages 713-721