Analysis of boron in diamond with UV photoluminescence

Photoluminescence (PL) spectra of boron-doped diamonds at temperature 298 K were recorded with excitation in wavelength range 110-300 nm from a synchrotron source. A prominent emission feature was measured at 480.0 nm, corresponding to energy 2.535 eV; we detected also a distinct photoluminescence excitation (PLE) band at 220.5 nm, 5.623 eV, for the first time. For sensitive analysis, the UV-PL technique provides a non-destructive method; we therefore recommend the use of UV-PL spectra excited in the region 200-230 nm to analyze boron dopant in diamonds. The least detectable concentration of the boron dopant is about 1 × 1016 atoms cm−3.

Sensitive analysis of boron in diamond is achieved with photoluminescence excited in the region 200-230 nm.143