کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437493 | 1398174 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phase transition and negative thermal expansion properties in isovalently substituted In2âxScx(MoO4)3 ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Sc-substituted In2âxScx(MoO4)3 (0 ⤠x ⤠2) ceramics were successfully synthesized by the solid state reaction method with the goal of tuning the phase transition temperature. Effects of Sc3+ substitution on the phase composition, microstructure, phase transition temperature and thermal expansion behavior of the In2âxScx(MoO4)3 (0 ⤠x ⤠2) ceramics were investigated using XRD, FESEM, EDX, XPS and TMA, respectively. The results indicate that all samples are single phase. The relative densities of the In2âxScx(MoO4)3 ceramics increased gradually with increasing Sc3+ content. Investigations on thermal expansion properties of the In2âxScx(MoO4)3 ceramics reveal that the temperature-induced phase transition from monoclinic to orthorhombic symmetry is strongly correlated to the Sc3+ content. The obtained In2(MoO4)3 ceramics undergoes a structural phase transition from monoclinic to orthorhombic around 355.3 °C. The phase transition temperature can be significantly shifted from 355.3 °C (x = 0) to 31.9 °C (x = 1.5) by partially replacing In3+ cations with less electronegative Sc3+ cations. All In2âxScx(MoO4)3 (0 ⤠x ⤠2) ceramics exhibit strong negative thermal expansion above the phase transition temperature. In0.5Sc1.5(MoO4)3 exhibits linear NTE over the 100-700 °C temperature range with a linear coefficient of thermal expansion of â3.99 à 10â6 °C â1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 15, 15 October 2017, Pages 12013-12017
Journal: Ceramics International - Volume 43, Issue 15, 15 October 2017, Pages 12013-12017
نویسندگان
Zhiping Zhang, Lu Yang, Qinyi Zhu, Qian Zheng, Hongfei Liu, Min Zhou, Xianghua Zeng, Xiaobing Chen,