کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437730 | 1398177 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vacuum brazing Nb and BN-SiO2 ceramic using a composite interlayer with network reinforcement architecture
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A novel composite interlayer with a reinforced network was designed using a SiC ceramic with a network structure and Ti-Ni-Nb composite filler foils, to which the Nb and BN-SiO2 ceramic were successfully brazed under vacuum. For a brazing temperature of 1160 °C and holding time of 10 min, the interfacial microstructure of the Nb/BN-SiO2 ceramic joint was Nb/(βTi,Nb)-TiNi eutectic structure+(βTi,Nb)2Ni+SiC+TiC/TiN+Ti2N+TiB+Ti5Si3+TiO/BN-SiO2 ceramic. In addition, the shear strength and nano-hardness were analyzed to evaluate the effect of the composite interlayer with a network reinforcement architecture on the mechanical properties of the joint. During brazing, the Ti-Ni-Nb filler metal infiltrated and reacted with the SiC to form the network reinforcement architecture, resulting in the residual stress being relieved and the mechanical performance of the joint being significantly improved. A maximum shear strength of 102 MPa was achieved, which was 60 MPa (142%) higher than that of the joint brazed without the network reinforcement architecture. A reduction in the residual stress on the BN-SiO2 ceramic side from 328 MPa to 210 MPa was observed with the network reinforcement architecture, and the fracture path of the joint changed from the surface of the BN-SiO2 ceramic to the interfacial reaction zone.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 11, 1 August 2017, Pages 8126-8132
Journal: Ceramics International - Volume 43, Issue 11, 1 August 2017, Pages 8126-8132
نویسندگان
L.X. Zhang, J.H. Yang, Z. Sun, X.P. Liu, J.C. Feng,