Sintering, microstructure and electricity properties of ITO targets with Bi2O3-Nb2O5 addition

High density and low electrical resistivity ITO targets were prepared by normal pressure sintering in oxygen with Bi2O3-Nb2O5 addition. The relative density, microstructure and electrical properties of the ITO targets can be adjusted by changing the sintering temperature (1350 °C~1550 °C) and the content of Bi2O3-Nb2O5. The results show that the sintering temperature of ITO targets with Bi2O3-Nb2O5 decreased from 1550 °C to 1450 °C, and the maximum relative density (99.6%) and the lowest electrical resistivity (1.78×10−4 Ω cm) were reached when the sintering temperature was 1450 °C with 5 wt% Bi2O3-Nb2O5. The carrier concentration increased as the increase of the contents of Bi2O3-Nb2O5 and sintering temperature. The mobility first increased, and then decreased above 1450 °C as the sintering temperature increased.