Effect of annealing temperature on structural and optoelectronic properties of γ-CuI thin films prepared by the thermal evaporation method

High quality transparent conducting CuI thin films were deposited at room temperature via thermal evaporation technique followed by post deposition annealing at different temperatures. The samples were characterised by X-ray diffraction (XRD), UV-Vis spectrophotometry, Scanning electron microscopy and I-V measurements. The structural, morphological and optical properties were studied as a function of the annealing temperature from room temperature (RT) to 200 °C. XRD results revealed that the films were polycrystalline with zinc blende structure of cubic phase. Increasing the annealing temperature increased the crystallite size from 33 to 49 nm whilst the dislocation density and lattice strain shifted to lower values. High transmittance of about 70-80% was exhibited by all films in the entire visible spectral range. The as deposited film possesed the lowest resistivity of 3.0×10−3 Ω cm.