کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544010 871698 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of the linear kink effect in PD SOI nMOSFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Study of the linear kink effect in PD SOI nMOSFETs
چکیده انگلیسی

We present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 1, January 2007, Pages 114–119
نویسندگان
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