کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5440517 1398231 2011 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical and thermal response of silicon oxycarbide materials obtained by spark plasma sintering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Electrical and thermal response of silicon oxycarbide materials obtained by spark plasma sintering
چکیده انگلیسی
In order to obtain dense silicon oxycarbide (SiOC) materials that maintain the properties of glass, non-conventional spark plasma sintering was used to sinter SiOC powders from 1300 to 1700 °C and with 40 MPa of pressure. The concurrence of electrical current, high pressure and low vacuum while the material is being heating produces a dense SiOC-derived material composed of a SiO2 glassy matrix reinforced with SiC nanowires grown in situ, graphene-like carbon and turbostratic graphite. SiOC materials with high electrical and thermal response are obtained as a result of this new processing technique. Electrical resistivity undergoes an extraordinary decrease of five orders of magnitude from 1300 (1.0 × 105 Ω m) to 1700 °C (0.78 Ω m), ranging from insulate to semiconductor material; and thermal conductivity increases by 30%, for these sintering temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 37, Issue 5, May 2017, Pages 2011-2020
نویسندگان
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