A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications

A semi empirical model has been proposed for sub-micron GaN MESFET's to calculate the I–V characteristics using an accurate velocity-field relationship obtained by fitting it with the Monte Carlo (MC) simulation. The results so obtained are compared with the experimental results to validate our model and are also compared with the results obtained from the simple saturation model to present the influence of electron drift velocity modeling on the device parameters. The model has been extended to predict the microwave parameters such as transconductance and output conductance of the device.