کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5441639 | 1398269 | 2017 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CO sensing characteristics of In-doped ZnO semiconductor nanoparticles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A study on the CO sensing characteristics of In-doped ZnO semiconductor nanoparticles (IZO NPs) prepared by a modified sol-gel technique is reported. The morphological and microstructural features of IZO NPs with various dopant concentrations (1Â at.%, 2Â at.%, 3Â at.%, and 5Â at.% In) were investigated by scanning electron microscopy (SEM) and X-ray powder diffraction (XRD). The influence of indium doping on defect characteristics of ZnO was also investigated by photoluminescence (PL). A thick film of IZO NPs was deposited by screen printing on an alumina substrate provided with a pair of Pt interdigitated electrodes to fabricate a simple conductometric sensor platform. The as fabricated In-doped ZnO sensors showed enhanced sensitivity to CO gas with respect to pure ZnO one. Sensors with low dopant loading (1Â at.% and 2Â at.% In) were found to be more sensitive with shorter response and recovery times than those with high dopant loading.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 1, March 2017, Pages 34-40
Journal: Journal of Science: Advanced Materials and Devices - Volume 2, Issue 1, March 2017, Pages 34-40
نویسندگان
R. Dhahri, M. Hjiri, L. El Mir, H. Alamri, A. Bonavita, D. Iannazzo, S.G. Leonardi, G. Neri,