Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation

Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 69, July 2017, Pages 254-258

Muhammad Zahir Iqbal, Nadia Anwar, Salma Siddique, Muhammad Waqas Iqbal, Tassadaq Hussain,