کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5443106 | 1398301 | 2016 | 36 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the AC admittance and conductance of non-polar SiOx-based resistive switching memory devices is measured as a function of temperature to investigate charge transport and potential switching mechanisms. After electroforming using a forward/backward voltage scan, devices were measured over the frequency range of 1 k-1 MHz and the temperature range of 200-400 K. For temperature (T) > 300 K, AC conductance follows Ï(Ï) = AÏs, where s is linearly dependent on temperature and close to, but less than, unity. For T < 300 K, Ï(Ï) is almost temperature-independent with s â¼Â 1. A classical hopping model and AC impedance spectroscopy measurements are found to provide reasonable explanations of the experimental data. Defect concentration is estimated to be 1-5 Ã 1019 cmâ3 and independent of device resistive state when modeling charge transport using a polaron hopping characteristic. The energy barrier to electron hopping is estimated to change from 0.1 eV to 0.6 eV and the average hopping distance varies from 1 nm to 6 nm when the device is switched between low- and high-resistance states, respectively. Device switching mechanisms are modeled by simple proton exchange reactions that both activate and deactivate the defects involved in change transport. The impedance spectroscopy results supporting hole-like polaron hopping and the values obtained for the physical parameters provide additional insights into the fundamental mechanisms of SiOx-based resistive memory. Uniform switching performance with robust high temperature reliability and fast operating speed demonstrate good potential for future nonvolatile memory applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Solid State Chemistry - Volume 44, Issue 3, September 2016, Pages 75-85
Journal: Progress in Solid State Chemistry - Volume 44, Issue 3, September 2016, Pages 75-85
نویسندگان
Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Jack C. Lee,