کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5449534 | 1512528 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Suspended p-n junction InGaN/GaN multiple quantum wells device with bottom silver reflector
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Suspended p-n junction InGaN/GaN multiple quantum wells device with bottom silver reflector Suspended p-n junction InGaN/GaN multiple quantum wells device with bottom silver reflector](/preview/png/5449534.png)
چکیده انگلیسی
In this study, we propose, fabricate, and characterize suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device with a bottom silver reflector for diverse applications. The suspended device was achieved through a double-side process on the GaN-on-silicon platform and tested by using a micro-reflectance/transmittance setup. When the suspended device operates under the light-emitting diode mode, a fraction of the emitted light reflected by the bottom silver reflector can enter into the air through the top escape cone, leading to improved light extraction efficiency. When the suspended device operates under the photodiode mode, part of the transmitted light can be reflected back by the bottom silver reflector to enhance the photovoltaic effect. The experimental results demonstrate that such suspended device can be used as both transmitter and receiver for visible light communication. And the detecting features even when the suspended structure is under turn-on state, demonstrating a potential realization of light emission and photodetection simultaneously.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 395, 15 July 2017, Pages 82-87
Journal: Optics Communications - Volume 395, 15 July 2017, Pages 82-87
نویسندگان
Xumin Gao, Xin Li, Yongchao Yang, Wei Yuan, Yin Xu, Wei Cai, Yongjin Wang,