An investigation of electronic and optical properties of InN nanosheet by first principle study

In this work, we investigated electronic and optical properties of InN nanosheet using density function theory (DFT) implemented in Wien2k code. We calculated the dielectric function, absorption coefficient, optical conductivity, refraction index, extinction index, reflectivity, and energy loss function of the InN nanosheet within GGA (PBE) and Engel-Vosko (E.V) approximation in two directions E||x (electric field parallel to nanosheet) and E||z (electric field perpendicular to nanosheet), we also calculated the band gap energy within GGA (PBE) and E.V approximations. Optical conductivity in directions to x and z shows that InN nanosheet has semiconductor properties. At the end, we calculated electronic and optical properties, and elastic constant of InN Bulk (wurtzite).