کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5454220 | 1514160 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal conductivity reduction of tungsten plasma facing material due to helium plasma irradiation in PISCES using the improved 3-omega method
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
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چکیده انگلیسی
The near-surface region of plasma facing material (PFM) plays an important role in thermal management of fusion reactors. In this work, we measured thermal conductivity of tungsten (W) surface layers damaged by He plasma in PISCES at UCSD. We studied the damage effect on both bulk, and thin film, W. We observed that the surface morphology of both bulk and thin film was altered after exposure to He plasma with the fluence of 1Â ÃÂ 1026Â mâ2 (bulk) and 2Â ÃÂ 1024Â mâ2 (thin film). Transmission electron microscopy (TEM) analysis reveals that the depth of the irradiation damaged layer was approximately 20Â nm on the bulk W exposed to He plasma at 773Â K for 2000Â s. In order to measure the thermal conductivity of this exceedingly thin damaged layer in the bulk W, we adopted the well-established '3-omega' method and employed novel nanofabrication techniques to improve the measurement sensitivity. For the damaged W thin film sample, we measured the reduction in electrical conductivity and used the Wiedemann-Franz (W-F) law to extract the thermal conductivity. Results from both measurements show that thermal conductivity in the damaged layers was reduced by at least â¼80% compared to that of undamaged W. This large reduction in thermal conductivity can be attributed to the scattering of electrons, the dominant heat carriers in W, caused by defects introduced by He plasma irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 486, 1 April 2017, Pages 267-273
Journal: Journal of Nuclear Materials - Volume 486, 1 April 2017, Pages 267-273
نویسندگان
Shuang Cui, Michael Simmonds, Wenjing Qin, Feng Ren, George R. Tynan, Russell P. Doerner, Renkun Chen,