کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458155 | 1516166 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device](/preview/png/5458155.png)
چکیده انگلیسی
Combining the p-NiO gate electrode and the stack barrier structure with unintentionally doped GaN insertion layer (serves as etching termination layer) is promising for achieving normally-off GaN power device. The band alignment and band offsets at the interface of NiO and GaN insertion layer play a crucial role in determining the performance of GaN device. In this letter, the p-NiO thin film/unintentionally doped GaN heterojunction was fabricated through a simple thermal oxidation method. The p-NiO thin film presents face-centered cubic crystalline structure with a band gap of approximately 3.69Â eV. The interfacial band alignment of the heterojunction is characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, the valence and the conduction band offsets were determined to be 1.16Â eV and 1.45Â eV, respectively. The NiO/GaN heterojunction is concluded to be type-II staggered band configuration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 728, 25 December 2017, Pages 400-403
Journal: Journal of Alloys and Compounds - Volume 728, 25 December 2017, Pages 400-403
نویسندگان
Liuan Li, Wenjing Wang, Liang He, Xiaorong Zhang, Zhisheng Wu, Yang Liu,