کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458343 | 1516169 | 2017 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-response NO2 resistive gas sensor based on bilayer MoS2 grown by a new two-step chemical vapor deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
MoS2 atomic layers with a lateral grain size of 50-100 μm were synthesized by a new two-step chemical vapor deposition method. The product was confirmed to be bilayer MoS2 by the characterization of Raman spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. The growth mechanism and the influencing factors during the growth process of the bilayer MoS2 were proposed and the so-obtained large lateral grain sizes of MoS2 atomic layers were attributed to the high surface mobility and enhanced surface evaporation. The resistive gas sensors based on as-prepared bilayer MoS2 films showed a p-type character and achieved a superior sensitivity of 2.6% to 1 ppm NO2 gas at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 253-259
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 253-259
نویسندگان
Tingting Xu, Yongyong Pei, Yunyun Liu, Di Wu, Zhifeng Shi, Junmin Xu, Yongtao Tian, Xinjian Li,