کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458394 | 1516169 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaAsBi/GaAs MQWs grown by MBE using a two-substrate-temperature technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) on (100) GaAs substrates were grown by molecular beam epitaxy (MBE) using the two-substrate-temperatures (TST) technique. In the TST technique, the substrate temperature was set at TGaAsBi = 350 °C for GaAsBi layers and TGaAs = 550 °C for GaAs layers for the growth of MQWs. The structural and optical characterization of GaAsBi/GaAs MQWs using TST technique was carried out for growth optimization by changing As4/Ga beam equivalent pressure (BEP) ratio. Atomic force microscope observation shows high As4/Ga BEP ratio supply can prevents roughening of the GaAsBi layer surface of MQWs. High resolution x-ray diffraction analysis results reveal Bi incorporation enhancement with increasing As4/Ga BEP ratio. The reciprocal space mapping shows highly strained MQWs layers can be grown without relaxation with respect to the GaAs substrate at optimized growth conditions. At room temperature 1.22 μm photoluminescence emission was obtained from GaAs0.962Bi0.038/GaAs MQWs grown using TST technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 694-699
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 694-699
نویسندگان
Pallavi Kisan Patil, Fumitaro Ishikawa, Satoshi Shimomura,