کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5458437 1516174 2017 26 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical transport characterization of Al and Sn doped Mg2Si thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Electrical transport characterization of Al and Sn doped Mg2Si thin films
چکیده انگلیسی
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 720, 5 October 2017, Pages 156-160
نویسندگان
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