کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458764 | 1516171 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor](/preview/png/5458764.png)
چکیده انگلیسی
We have studied the surface topographical changes and the Raman spectroscopic modifications for carbon-doped MgB2 that was fabricated with carbon-encapsulated boron as precursor. Bulk MgB2 samples of 20Â mm diameter and 7Â mm thickness were prepared by an in-situ one-step solid state sintering technique. It was found that optimum doping led to the reduction of the average grain size, which was then effective in enhancing flux pinning in MgB2. For the optimum doped sample, the self-field critical current density Jc at 20Â K reached 375Â kA/cm2. However, Tc values were suppressed with further carbon doping, presumably due to an increase in the disorder in the system, which was demonstrated by a decrease in full width and half maxima of the E2g mode in the Raman spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 723, 5 November 2017, Pages 751-756
Journal: Journal of Alloys and Compounds - Volume 723, 5 November 2017, Pages 751-756
نویسندگان
Dinesh Kumar, M. Muralidhar, Masaki Higuchi, M.S. Ramachandra Rao, Masato Murakami,