Light induced charge transport in La2NiMnO6 based Schottky diode

La2NiMnO6 (LNMO) thin film is prepared on fluorine doped tin oxide (FTO) coated glass by chemical solution deposition technique. The room temperature crystal structure of LNMO is determined using X-ray diffraction and Raman spectra. The band gap (∼1.33 eV) obtained using UV-visible absorption spectrum of LNMO film is found to be very close to the Shockley-Queisser band gap (∼1.34 eV) for a single junction solar cell. A FTO/LNMO/Au type Schottky device is fabricated to explore the photo physical properties of LNMO thin film. A significant change in the resistance, barrier potential height, effective mobility, conductivity, charge carrier density and carrier diffusion length is observed when the experiment is performed under dark and white light illuminations. The thermionic emission theory is used to analyze the charge transport mechanism in the material.