Structural and photoelectrical properties of Ga2O3/SiC/Al2O3 multilayers

β-Ga2O3 and SiC belong to the wide bandgap semiconductor materials and have a wide range of industrial applications. In this paper, laser molecular beam epitaxy (L-MBE) equipment was used to prepare Ga2O3/SiC multilayers on sapphire substrates. The correlation between the fabrication parameters and the obtained lattice structure and the photoelectric properties were systematically investigated. For Ga2O3/SiC grown on sapphire substrates followed different annealed conditions, all samples exhibit prominent photo-electric response. We found that besides annealing on Ga2O3 layer, if there is an additional annealing process on SiC layer, the resistance of the multilayers would be affected, otherwise would influence the photo-electric response under ultraviolet light (254 nm). To sum up; the extra annealed process on SiC layer which might influence its crystallinity and decrease the carrier concentration would change photoelectrical properties of Ga2O3/SiC multilayers. The related work of this paper provides a reference value to study the growth and physical properties of Ga2O3/SiC multilayers.