ReviewDirect synthesis of high-performance thermal sensitive VO2(B) thin film by chemical vapor deposition for using in uncooled infrared detectors

- Thermal sensitive VO2 thin films were directly fabricated by CVD at 400-450 °C.
- With in-situ annealing process, the deposition temperature can be reduced to 375 °C.
- Achieved VO2(B) thin films possess high TCRs and favorable square resistances.

This work reports a new method for low-temperature, cost-effective fabrication of VO2(B) thin films, which is assumed to be the preferred phase structure for the application in uncooled infrared detectors using chemical vapor deposition (CVD) in a three-zone furnace. While high-vacuum techniques are extensively used nowadays which together with high temperature post-annealing are very complicated in operation and expensive, our method successively achieves the facile and scalable synthesis of thermal sensitive VO2(B) thin films with high TCRs (from −2.4%/K to −2.89%/K) and favorable square resistances (10 kΩ-40 kΩ) at a growth temperature range of 375-450 °C. The output results are comparable to the reported values of the high-vacuum synthesized VO2(B) thin films, proved our method suitable for uncooled infrared detector applications.