کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5459184 1516179 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films
چکیده انگلیسی


- In2Te3 thin films were deposited using vacuum evaporation method.
- Substrate temperature and film thickness dependent properties established.
- Thermoelectric power increased with substrate temperature and declined at 473 K.
- Thermo emf is inversely propositional to film thickness.
- The maximum power factor of In3Te3 films found to be 27 μWm−1K−2 at 450 K.

Herein, the thermoelectric properties of vacuum deposited In2Te3 thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 μV/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 μWm−1K−2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 715, 25 August 2017, Pages 224-229
نویسندگان
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