کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5459717 | 1516187 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6Â ÃÂ 106, a field-effect mobility of 2.13Â cm2Â Vâ1Â sâ1, a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1Â pAÂ at a low driven voltage of <3Â V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 707, 15 June 2017, Pages 162-166
Journal: Journal of Alloys and Compounds - Volume 707, 15 June 2017, Pages 162-166
نویسندگان
Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Chun-Hu Cheng, Yung-Hsien Wu,