کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5459729 1516187 2017 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructural analysis of the modifications in substrate-bound silicon-rich silicon oxide induced by continuous wave laser irradiation
ترجمه فارسی عنوان
تجزیه و تحلیل میکرو سازگار از تغییرات در اکسید سیلیکون غنی از سیلیکون متصل شده توسط القاء شده توسط تابش لیزر پیوسته
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
چکیده انگلیسی
Laser-irradiation of silicon-rich silicon oxides (SRSO) is a promising technique for spatially well-defined production of silicon nanocrystals (nc-Si) showing room temperature photoluminescence. In this work, we use continuous-wave (CW) laser processing to generate nc-Si in SRSO films on fused silica substrates. One main problem is damage introduced by laser processing which results in a porous layer beneath the original film surface as is consistently shown by electron tomography and energy-dispersive X-ray spectrometry. Processing conditions for damage-free nc-Si formation are identified by systematic variation of laser intensity and measuring the depth of the damaged region by transmission electron microscopy (TEM). By combining TEM imaging and analysis it is shown that the damaged region has a composition close to SiO2 which is due to a predominant loss of silicon rather than an a result of surface oxidation during laser processing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 707, 15 June 2017, Pages 227-232
نویسندگان
, , , , , ,