کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5459811 | 1516189 | 2017 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design and synthesis of diffusion-modified HfC/HfCSiC bilayer system onto WC-Co substrate for adherent diamond deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
A diffusion-modified HfC/HfCSiC bilayer system was innovatively designed and synthesized onto cemented carbide (WC-Co) substrate by reactive double glow plasma surface alloying (DGPSA) technique for adherent diamond deposition. The microstructure, phase composition and adhesion of the bilayer system were investigated, as well as its effect on the diamond coating system. The results showed that the bilayer system was made up of a 1.0-μm-thick nanostructured HfC-dominant inner layer and a 0.7-μm-thick HfCSiC mixed outer layer. As the gradient element distributions existed at the bilayer/substrate interface, the bilayer system displayed a superior adherence to the substrate. And the surface microhardness improved from 1802 HV0.1 to 2857 HV0.1 after the reactive DGPSA treatment. Subsequently, a uniform and dense nanocrystalline diamond coating with thickness of 4.0 μm was successfully deposited onto the HfC/HfCSiC interlayered substrate. Benefit from the effective suppression of Co diffusion by the interlayer and the reasonable design in its hardness and thermal expansion coefficient (TEC), the obtained diamond coating possessed an excellent adhesion. Therefore, the diffusion-modified HfC/HfCSiC bilayer systems synthesized via reactive DGPSA technique can be considered as a novel interlayer option for depositing adherent diamond coatings on WC-Co substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 376-383
Journal: Journal of Alloys and Compounds - Volume 705, 25 May 2017, Pages 376-383
نویسندگان
Jie Gao, Hongjun Hei, Ke Zheng, Rong Wang, Yanyan Shen, Xiaoping Liu, Bin Tang, Zhiyong He, Shengwang Yu,