| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 5460541 | 1516195 | 2017 | 6 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Characters of group V and VII atoms doped WSe2 monolayer
												
											دانلود مقاله + سفارش ترجمه
													دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
																																												موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													فلزات و آلیاژها
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												We have investigated electronic and magnetic properties of n- and p-type impurities by means of group V and VII atoms substituting selenium in WSe2 monolayer based on density functional theory. Our results show that N, P and As substitutions indicate p-type doping and F, Cl, Br and I substitutions indicate n-type doping. Moreover, some atoms of group V and VII can induce magnetic moment, and the magnetic moment mainly originates from p orbital of the dopant and d orbital of the neighbor W atoms. N-, P-, F- (or Br-doped) WSe2 exhibit magnetic nanomaterial (or magnetic metallic) features, Cl- and As-doped systems show no-magnetic metal and I-doped system exhibits half-metallic (HM) properties. The biggest magnetic moment is 0.846 μB of F-doped system. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate group V and VII atoms into WSe2 monolayer under W-rich experimental conditions. The formation energy of the F-doped system is the lowest and the next lowest formation energy is obtained in the N-doped system. These results are useful for understand characteristics of n- and p-doped WSe2 nanostructures.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 699, 30 March 2017, Pages 291-296
											Journal: Journal of Alloys and Compounds - Volume 699, 30 March 2017, Pages 291-296
نویسندگان
												Congxia Yang, Xu Zhao, Tianxing Wang, Shuyi Wei,