کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5460763 | 1516172 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory](/preview/png/5460763.png)
چکیده انگلیسی
Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of â¼103, switching cycle endurance for 102 and long retention time for 104Â s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 722, 25 October 2017, Pages 753-759
Journal: Journal of Alloys and Compounds - Volume 722, 25 October 2017, Pages 753-759
نویسندگان
Guangdong Zhou, Lihua Xiao, Shuangju Zhang, Bo Wu, Xiaoqin Liu, Ankun Zhou,